2SA562 transistor (pnp) feature power dissipation p cm : 0.5 w (tamb=25 ) collector current i cm : -0.5 a collector-base voltage v (br) cbo : -35 v operating and storage junction temperature range t stg : -55 to +150 t j : 150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v(br) cbo ic= -100 a , i e =0 -35 v collector-emitter breakdown voltage v(br) ceo i c = -1ma , i b =0 -30 v emitter-base breakdown voltage v(br) ebo i e = -100 a, i c =0 -5 v collector cut-off current i cbo v cb =-35v , i e =0 -0.1 a emitter cut-off current i ebo v eb = -5v , i c =0 -0.1 a dc current gain h fe v ce =-1 v, i c =-100ma 70 240 collector-emitter saturation voltage v ce(sat) i c = -100ma, i b = -10 ma -0.25 v base-emitter voltage v be(on) v ce =- 1v, i c =-100 ma -1 v transition frequency f t v ce = -6 v, i c = -20ma f=30mhz 200 mhz classification of h fe rank o y range h fe(1) 70-140 120-240 1 2 3 to-92 1. emitter 2. collector 3. base 2SA562 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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